![]() ![]() To suppress the stacking fault expansion, the introduction of highly nitrogen-doped layer called a “recombination-enhancing layer” has been proposed. ![]() Basal plane dislocation (BPD) in the SiC epitaxial wafers causes stacking fault expansion, which leads to the fatal degradation of SiC bipolar devices. The quality of SiC epitaxial wafers is particularly important to secure the reliability of large-current power devices used for automotive applications. Silicon carbide (SiC) power devices are promising next-generation devices and their market is growing globally year by year. In addition, we analyzed the effect of gate voltage clipping in class-F and inverse class-F operation, which is known as a method for improving the efficiency of amplifiers by using a large-signal model to figure out the limiting factorvof efficiency. We newly adopted a large-signal lowfrequency measurement that enables evaluation under conditions close to the actual radio frequency operation, to explore design guidelines for GaN HEMTs. This paper describes the characterization and analysis method for the current source of GaN HEMTs that we are working on to develop the GaN HEMT amplifiers for base stations. In 5G networks, where further improvement in network capacity and data rates is required, the presence of GaN HEMTs is expected to grow further due to their advantages in broadening the bandwidth of amplifiers. In recent years, gallium nitride high-electron-mobility transistor (GaN HEMT) amplifiers with high efficiency have been adopted due to the increasing demand for downsized and low-power-consumption base stations. ![]()
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